By Alexander Miller, consultant in energy markets. Eurasia Business News, June 10, 2025. Article n°1550.

Specialists from the Russian Technological University MIREA have developed a diamond-based field-effect transistor (FET), reported the press service of the Ministry of Education and Science of the Russian Federation. According to its creators, the new transistor (a device that controls electric current using an electrical signal through a semiconductor) will find application in nuclear energy and space technology.

“The new device uses a crystallographically perfect diamond layer less than 1 micron thick, created by thermochemical treatment. This technology allows you to eliminate surface defects, which significantly improves electrophysical characteristics,” the press service noted.

According to the leading developer, head of the laboratory “Diamond Microwave Electronics” Andrey Altukhov, the transistor will be able to demonstrate 10-15% better performance compared to existing analogues. “The key advantage is the combination of high temperature resistance, radiation resistance and energy efficiency,” the designer said.

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Diamond transistors will find application in next-generation communication systems, radar stations, medical equipment and industrial electronics. The development is especially relevant for applications in extreme conditions – from space technology to nuclear energy, where conventional silicon transistors quickly fail.

Russia is creating electronic components based on diamond materials for radiation and cosmic ray sensors, as well as high-speed and powerful transistors and diodes.

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© Copyright 2025 – Eurasia Business News. Article no. 1550.